RQ6E060ATTCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G6

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

25.9nC @ 10V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

950mW Ta

Packaging :

Cut Tape (CT)

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

6

Factory Lead Time :

16 Weeks

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0346Ohm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Rds On (Max) @ Id, Vgs :

26.4m Ω @ 6A, 10V

DS Breakdown Voltage-Min :

30V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 15V

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

6A