RP1H065SPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

31m Ω @ 6.5A, 10V

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 10V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Continuous Drain Current (ID) :

6.5A

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-F6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 5V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.046Ohm

Pulsed Drain Current-Max (IDM) :

26A

Pin Count :

6

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

45V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Terminal Position :

Dual

Package / Case :

6-SMD, Flat Leads

Vgs(th) (Max) @ Id :

3V @ 1mA

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Drain to Source Voltage (Vdss) :

45V

Operating Temperature :

150°C TJ

Power Dissipation-Max :

2W Ta

Published :

2007

FET Type :

P-Channel