RM2N650IP

Manufacturer :

Rectron USA

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Mounting Style :

Through Hole

Package / Case :

TO-251-3 Stub Leads, IPak

Channel Mode :

Enhancement

Rise Time :

3 ns

Drive Voltage (Max Rds On, Min Rds On) :

10V

Packaging :

Case - TO-251

Supplier Device Package :

TO-251

Configuration :

Single

FET Feature :

-

Input Capacitance (Ciss) (Max) @ Vds :

190 pF @ 50 V

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Capacitance :

Input Capacitance (Ciss) - 190pF

Mounting Type :

Through Hole

Transistor Type :

1 N-Channel

Power Dissipation (Max) :

23W (Tc)

Current - Continuous Drain (Id) @ 25°C :

2A (Tc)

Rds On (Max) @ Id, Vgs :

2.5Ohm @ 1A, 10V

Drain to Source Voltage (Vdss) :

650 V

Product Type :

MOSFET

Vgs (Max) :

±30V

Number of Channels :

1 Channel

Package :

Tube

Transistor Polarity :

N-Channel

Product Status :

Active

Manufacturer :

Rectron

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Voltage :

Vdss - 710V

Maximum Operating Temperature :

+ 150 C

Brand :

Rectron

Product Category :

MOSFET

Subcategory :

MOSFETs

RoHS :

Y