RM21N650T2

Manufacturer :

Rectron USA

Product Category :

Transistors - FETs, MOSFETs - Single

Product Type :

MOSFET

Series :

-

Drain to Source Voltage (Vdss) :

650 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Packaging :

Case - TO-220

Package / Case :

TO-220-3

Power Dissipation (Max) :

188W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

2600 pF @ 50 V

Transistor Type :

1 N-Channel

RoHS :

Y

Product Category :

MOSFET

Supplier Device Package :

TO-220-3

Configuration :

Single

Package :

Tube

Rise Time :

6 ns

Current - Continuous Drain (Id) @ 25°C :

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Voltage :

Vdss - 650V

Manufacturer :

Rectron

Rds On (Max) @ Id, Vgs :

180mOhm @ 10.5A, 10V

Product Status :

Active

Vgs (Max) :

±30V

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

Channel Mode :

Enhancement

FET Type :

N-Channel

FET Feature :

-

Brand :

Rectron

Subcategory :

MOSFETs

Maximum Operating Temperature :

+ 150 C

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Transistor Polarity :

N-Channel

Capacitance :

Input Capacitance (Ciss) - 2600pF

Mounting Style :

Through Hole