RJK03M5DPA-00#J5A
- Mfr.Part #
- RJK03M5DPA-00#J5A
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- 8-WFDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 30A 8WPAK
- Stock
- 167,593
- In Stock :
- 167,593
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 16 Weeks
- DS Breakdown Voltage-Min :
- 30V
- Continuous Drain Current (ID) :
- 30A
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2013
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Power Dissipation-Max :
- 30W Tc
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 5
- Lead Free :
- Lead Free
- Number of Pins :
- 8
- Input Capacitance (Ciss) (Max) @ Vds :
- 1890pF @ 10V
- Pin Count :
- 8
- Avalanche Energy Rating (Eas) :
- 11 mJ
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 30A Ta
- Drain to Source Voltage (Vdss) :
- 30V
- Pulsed Drain Current-Max (IDM) :
- 120A
- Gate Charge (Qg) (Max) @ Vgs :
- 10.4nC @ 4.5V
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Terminal Form :
- NO LEAD
- Package / Case :
- 8-WFDFN Exposed Pad
- JESD-30 Code :
- R-PDSO-N5
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 15A, 10V
- Datasheets
- RJK03M5DPA-00#J5A
N-Channel Tape & Reel (TR) 6.5m Ω @ 15A, 10V ±20V 1890pF @ 10V 10.4nC @ 4.5V 30V 8-WFDFN Exposed Pad
RJK03M5DPA-00#J5A Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 11 mJ.The maximum input capacitance of this device is 1890pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.There is no pulsed drain current maximum for this device based on its rated peak drain current 120A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
RJK03M5DPA-00#J5A Features
the avalanche energy rating (Eas) is 11 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 120A.
a 30V drain to source voltage (Vdss)
RJK03M5DPA-00#J5A Applications
There are a lot of Renesas Electronics America
RJK03M5DPA-00#J5A applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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