RJK0328DPB-01#J0
- Mfr.Part #
- RJK0328DPB-01#J0
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 60A LFPAK
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 2.1m Ω @ 30A, 10V
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G4
- Fall Time (Typ) :
- 7.3 ns
- Operating Mode :
- ENHANCEMENT MODE
- Contact Plating :
- Gold
- Factory Lead Time :
- 16 Weeks
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 60A Ta
- Drain to Source Voltage (Vdss) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 60A
- Number of Pins :
- 5
- Pulsed Drain Current-Max (IDM) :
- 240A
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 4.5V
- Radiation Hardening :
- No
- Power Dissipation :
- 65W
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Package / Case :
- SC-100, SOT-669
- Power Dissipation-Max :
- 65W Tc
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Turn On Delay Time :
- 9.4 ns
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 6380pF @ 10V
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 61.5 ns
- Operating Temperature :
- 150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 4.3ns
- Published :
- 2011
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Drain-source On Resistance-Max :
- 0.0029Ohm
- DS Breakdown Voltage-Min :
- 30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- RJK0328DPB-01#J0

N-Channel Tape & Reel (TR) 2.1m Ω @ 30A, 10V ±20V 6380pF @ 10V 42nC @ 4.5V 30V SC-100, SOT-669
RJK0328DPB-01#J0 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6380pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 61.5 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 240A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.4 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
RJK0328DPB-01#J0 Features
a continuous drain current (ID) of 60A
the turn-off delay time is 61.5 ns
based on its rated peak drain current 240A.
a 30V drain to source voltage (Vdss)
RJK0328DPB-01#J0 Applications
There are a lot of Renesas Electronics America
RJK0328DPB-01#J0 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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