RHK003N06T146

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Factory Lead Time :

10 Weeks

Turn On Delay Time :

6 ns

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

200mW

Height :

1.1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

JESD-609 Code :

e1

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Input Capacitance (Ciss) (Max) @ Vds :

33pF @ 10V

Length :

2.9mm

Terminal Finish :

TIN SILVER COPPER

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Rise Time :

5ns

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Pbfree Code :

yes

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation-Max :

200mW Ta

Mount :

Surface Mount

Radiation Hardening :

No

Transistor Application :

SWITCHING

Fall Time (Typ) :

5 ns

Published :

2006

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Drain to Source Breakdown Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

10

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

1 Ω @ 300mA, 10V

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Voltage - Rated DC :

30V

Resistance :

1Ohm

Width :

1.6mm

Number of Pins :

3

Current Rating :

300mA

Terminal Position :

Dual

Terminal Form :

Gull wing

Number of Elements :

1

Turn-Off Delay Time :

13 ns

Continuous Drain Current (ID) :

300mA