RHK003N06T146

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Lead Free :

Lead Free

Vgs (Max) :

±20V

Power Dissipation-Max :

200mW Ta

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Fall Time (Typ) :

5 ns

Time@Peak Reflow Temperature-Max (s) :

10

Input Capacitance (Ciss) (Max) @ Vds :

33pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Rise Time :

5ns

Current Rating :

300mA

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Number of Pins :

3

Pbfree Code :

yes

Turn-Off Delay Time :

13 ns

Drain to Source Breakdown Voltage :

60V

Turn On Delay Time :

6 ns

Terminal Form :

Gull wing

Length :

2.9mm

Number of Terminations :

3

Number of Elements :

1

JESD-609 Code :

e1

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Continuous Drain Current (ID) :

300mA

Published :

2006

Width :

1.6mm

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Type :

N-Channel

Factory Lead Time :

10 Weeks

Transistor Application :

SWITCHING

Height :

1.1mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Rds On (Max) @ Id, Vgs :

1 Ω @ 300mA, 10V

Power Dissipation :

200mW

Mount :

Surface Mount

Terminal Finish :

TIN SILVER COPPER

Resistance :

1Ohm

Pin Count :

3

Operating Temperature :

150°C TJ

Element Configuration :

Single

Terminal Position :

Dual

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

30V