RFP40N10

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Mfr.Part #
RFP40N10
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 40A TO220-3
Stock
7,122
In Stock :
7,122

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
30ns
Threshold Voltage :
4V
Turn-Off Delay Time :
42 ns
Lead Free :
Lead Free
Rds On Max :
40 mΩ
Operating Temperature :
-55°C~175°C TJ
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Voltage :
100V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
3
Continuous Drain Current (ID) :
40A
Vgs(th) (Max) @ Id :
4V @ 250µA
Package / Case :
TO-220-3
FET Type :
N-Channel
Power Dissipation-Max :
160W Tc
Voltage - Rated DC :
100V
Rds On (Max) @ Id, Vgs :
40mOhm @ 40A, 10V
Packaging :
Tube
Max Operating Temperature :
175°C
Mount :
Through Hole
Drain to Source Resistance :
40mOhm
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current :
40A
REACH SVHC :
No SVHC
Min Operating Temperature :
-55°C
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Vgs (Max) :
±20V
Drain to Source Voltage (Vdss) :
100V
Number of Elements :
1
Drain to Source Breakdown Voltage :
100V
Fall Time (Typ) :
20 ns
Supplier Device Package :
TO-220-3
Element Configuration :
Single
Current Rating :
40A
Power Dissipation :
160W
Gate Charge (Qg) (Max) @ Vgs :
300nC @ 20V
Datasheets
RFP40N10
Introducing Transistors - FETs, MOSFETs - Single onsemi RFP40N10 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Voltage:100V, Number of Pins:3, Package / Case:TO-220-3, RFP40N10 pinout, RFP40N10 datasheet PDF, RFP40N10 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi RFP40N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi RFP40N10


N-Channel Tube 40mOhm @ 40A, 10V ±20V 300nC @ 20V 100V TO-220-3

RFP40N10 Description


The ON Semiconductor RFP40N10 is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses the feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.



RFP40N10 Features


  • rDS(ON) = 0.040?

  • UIS Rating Curve

  • SOA is Power Dissipation Limited

  • 175℃ Operating Temperature

  • 40A, 100V



RFP40N10 Application


  • Switching regulators

  • Switching converters

  • Motor drivers 

  • Relay drivers


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