RFL1N12

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.9Ohm @ 1A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On, Min Rds On) :

10V

Vgs (Max) :

±20V

FET Type :

N-Channel

Operating Temperature :

-55°C ~ 150°C (TJ)

Series :

-

Package / Case :

TO-205AF Metal Can

Current - Continuous Drain (Id) @ 25°C :

1A (Tc)

Power Dissipation (Max) :

8.33W (Tc)

Mounting Type :

Through Hole

FET Feature :

-

Input Capacitance (Ciss) (Max) @ Vds :

200 pF @ 25 V

Package :

Bulk

Product Status :

Active

Drain to Source Voltage (Vdss) :

120 V

Supplier Device Package :

TO-205AF (TO-39)