RFG40N10
- Mfr.Part #
- RFG40N10
- Manufacturer
- Harris Corporation
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 5,548
- In Stock :
- 5,548
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Power Dissipation-Max :
- 160W Tc
- Published :
- 2002
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 40mOhm @ 40A, 10V
- Supplier Device Package :
- TO-247-3
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 20V
- Drain to Source Voltage (Vdss) :
- 100V
- Package / Case :
- TO-247-3
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- RFG40N10

N-Channel Tube 40mOhm @ 40A, 10V ±20V 300nC @ 20V 100V TO-247-3
RFG40N10 Description
RFG40N10 N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits.
RFG40N10 Features
-
40A, 100V
-
UIS Rating Curve
-
rDS(ON) = 0.040?
-
175oC Operating Temperature
-
SOA is Power Dissipation Limited
-
Related Literature- TB334 ?°Guidelines for Soldering Surface Mount Components to PC Boards?±
RFG40N10 Applications
-
Industrial
-
Personal electronics
-
Communications equipment
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