RFD4N06L

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max (Abs) :

30W

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-252AA

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

4A

Transistor Application :

SWITCHING

JESD-609 Code :

e0

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

10A

RoHS Status :

Non-RoHS Compliant

Number of Terminals :

2

Number of Elements :

1

Case Connection :

DRAIN

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

60V

Terminal Position :

Single

Qualification Status :

Not Qualified

Surface Mount :

yes

Operating Temperature (Max) :

175°C

Terminal Finish :

Tin/Lead (Sn/Pb)

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.6Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Compliant