RFD4N06L

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Operating Temperature (Max) :

175°C

Drain-source On Resistance-Max :

0.6Ohm

Drain Current-Max (Abs) (ID) :

4A

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max (Abs) :

30W

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Number of Terminals :

2

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Form :

Gull wing

Case Connection :

DRAIN

Number of Elements :

1

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e0

DS Breakdown Voltage-Min :

60V

Pulsed Drain Current-Max (IDM) :

10A

Reach Compliance Code :

Compliant

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-252AA

FET Technology :

METAL-OXIDE SEMICONDUCTOR