RFD20N03SM9A

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

30 V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

20A (Tc)

Vgs (Max) :

±20V

Power Dissipation (Max) :

90W (Tc)

Supplier Device Package :

TO-252-3 (DPAK)

Input Capacitance (Ciss) (Max) @ Vds :

1150 pF @ 25 V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

25mOhm @ 20A, 10V

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

75 nC @ 20 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Series :

-

FET Feature :

-

Operating Temperature :

-55°C ~ 175°C (TJ)

Package :

Bulk

RoHS :

Non-Compliant