RFB18N10CSVM

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On, Min Rds On) :

10V

Vgs (Max) :

±20V

Product Status :

Active

Series :

-

Gate Charge (Qg) (Max) @ Vgs :

20 nC @ 10 V

Supplier Device Package :

TO-220-5

Package :

Bulk

Drain to Source Voltage (Vdss) :

100 V

FET Feature :

-

Power Dissipation (Max) :

79W (Tc)

Operating Temperature :

-55°C ~ 175°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

18A (Tc)

FET Type :

N-Channel

Mounting Type :

Through Hole

Package / Case :

TO-220-5

Rds On (Max) @ Id, Vgs :

100mOhm @ 9A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA