RFA100N05E

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Turn On Time-Max (ton) :

60ns

RoHS Status :

Non-RoHS Compliant

Drain-source On Resistance-Max :

0.008Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature (Max) :

175°C

Power Dissipation Ambient-Max :

240W

Power Dissipation-Max (Abs) :

240W

ECCN Code :

EAR99

JESD-609 Code :

e0

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Terminal Form :

THROUGH-HOLE

Additional Feature :

MEGAFET

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

300A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Terminals :

5

DS Breakdown Voltage-Min :

50V

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

100A

Case Connection :

DRAIN

Transistor Element Material :

SILICON

JEDEC-95 Code :

MO-093AA

Turn Off Time-Max (toff) :

100ns

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Number of Elements :

1

JESD-30 Code :

R-PSFM-T5