RDR005N25TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

99 Weeks

Power Dissipation-Max :

540mW Ta

Drain Current-Max (Abs) (ID) :

0.5A

JESD-30 Code :

R-PDSO-G3

Drain-source On Resistance-Max :

9.6Ohm

Time@Peak Reflow Temperature-Max (s) :

10

Package / Case :

SC-96

Terminal Position :

Dual

Radiation Hardening :

No

Transistor Element Material :

SILICON

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Number of Terminations :

3

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

70pF @ 25V

JESD-609 Code :

e3/e2

Vgs(th) (Max) @ Id :

3V @ 1mA

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

1W

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Operating Temperature :

150°C TJ

Terminal Finish :

TIN/TIN COPPER

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Turn On Delay Time :

6 ns

Number of Pins :

96

ECCN Code :

EAR99

Height :

950μm

Turn-Off Delay Time :

21 ns

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

8.8 Ω @ 250mA, 10V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Length :

3mm

Continuous Drain Current (ID) :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.8mm

Drain to Source Breakdown Voltage :

250V