RD3U060CNTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 25V

Drain Current-Max (Abs) (ID) :

6A

Avalanche Energy Rating (Eas) :

2.62 mJ

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

24A

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

52W Tc

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.53Ohm

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

530m Ω @ 3A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Terminal Position :

Single

DS Breakdown Voltage-Min :

250V

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

250V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 1mA

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

16 Weeks

Case Connection :

DRAIN

Surface Mount :

yes

Packaging :

Tape and Reel (TR)