RCX450N20
- Mfr.Part #
- RCX450N20
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 45A TO220FM
- Stock
- 3,712
- In Stock :
- 3,712
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 45A
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-220AB
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Bulk
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Drain to Source Voltage (Vdss) :
- 200V
- Case Connection :
- Isolated
- DS Breakdown Voltage-Min :
- 200V
- Published :
- 2013
- Power Dissipation-Max :
- 2.23W Ta 40W Tc
- Pulsed Drain Current-Max (IDM) :
- 180A
- Pin Count :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3 Full Pack
- Factory Lead Time :
- 16 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 160 mJ
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±30V
- Drain-source On Resistance-Max :
- 0.055Ohm
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 22.5A, 10V
- Datasheets
- RCX450N20

N-Channel Bulk 55m Ω @ 22.5A, 10V ±30V 4200pF @ 25V 80nC @ 10V 200V TO-220-3 Full Pack
RCX450N20 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 160 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4200pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 45A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 180A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
RCX450N20 Features
the avalanche energy rating (Eas) is 160 mJ
a continuous drain current (ID) of 45A
based on its rated peak drain current 180A.
a 200V drain to source voltage (Vdss)
RCX450N20 Applications
There are a lot of ROHM Semiconductor
RCX450N20 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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