RCJ050N25TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5.5V @ 1mA

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Rds On (Max) @ Id, Vgs :

1.36 Ω @ 2.5A, 10V

Reach Compliance Code :

not_compliant

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

20A

Lead Free :

Lead Free

Power Dissipation-Max :

1.56W Ta 30W Tc

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Terminal Position :

Single

Number of Elements :

1

Terminal Form :

Gull wing

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

250V

Drain Current-Max (Abs) (ID) :

5A

Factory Lead Time :

10 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

5A

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

250V

Number of Pins :

83

Packaging :

Cut Tape (CT)

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

1.82 mJ