RCD100N20TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

40A

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

182m Ω @ 5A, 10V

Rise Time :

35ns

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

25 ns

Gate to Source Voltage (Vgs) :

30V

Published :

2011

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Turn-Off Delay Time :

40 ns

Vgs(th) (Max) @ Id :

5.25V @ 1mA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

15 ns

FET Type :

N-Channel

Power Dissipation-Max :

850mW Ta 20W Tc

DS Breakdown Voltage-Min :

200V

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Lead Free :

Lead Free

Continuous Drain Current (ID) :

10A

Vgs (Max) :

±30V

Number of Pins :

3

Mounting Type :

Surface Mount

Pin Count :

3

Factory Lead Time :

10 Weeks

Drain to Source Voltage (Vdss) :

200V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Number of Terminations :

2

Number of Elements :

1

Terminal Form :

Gull wing