RAQ045P01TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Continuous Drain Current (ID) :

4.5A

Rds On (Max) @ Id, Vgs :

30m Ω @ 4.5A, 4.5V

Packaging :

Cut Tape (CT)

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Number of Terminations :

6

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.03Ohm

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

-8V

Transistor Application :

SWITCHING

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

1V @ 1mA

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

18A

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 6V

Mount :

Surface Mount

Factory Lead Time :

26 Weeks

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Pin Count :

6

Published :

2011

Operating Temperature :

150°C TJ

Power Dissipation-Max :

600mW Ta

DS Breakdown Voltage-Min :

12V

Drain to Source Voltage (Vdss) :

12V

JESD-30 Code :

R-PDSO-G6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Terminal Position :

Dual

Number of Elements :

1

Pbfree Code :

yes