RAL045P01TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 6V

Factory Lead Time :

20 Weeks

Power Dissipation-Max :

1W Ta

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Fall Time (Typ) :

150 ns

Packaging :

Tape and Reel (TR)

Height :

770μm

Vgs(th) (Max) @ Id :

1V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Package / Case :

6-SMD, Flat Leads

Number of Terminations :

6

Turn-Off Delay Time :

400 ns

Number of Channels :

1

Rise Time :

60ns

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Lead Free :

Lead Free

Terminal Position :

Dual

Element Configuration :

Single

Number of Elements :

1

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

-8V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

12V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2mm

Rds On (Max) @ Id, Vgs :

30m Ω @ 4.5A, 4.5V

Mount :

Surface Mount

Width :

1.7mm

Continuous Drain Current (ID) :

4.5A

Number of Pins :

6

Pin Count :

6

Turn On Delay Time :

16 ns

Published :

2011

Drain to Source Breakdown Voltage :

-12V

Drain-source On Resistance-Max :

0.03Ohm

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON