RAF040P01TCL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Fall Time (Typ) :

120 ns

Continuous Drain Current (ID) :

4A

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 4.5V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Rise Time :

43ns

Drain to Source Breakdown Voltage :

-12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 6V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

240 ns

Number of Pins :

3

Factory Lead Time :

16 Weeks

Transistor Application :

SWITCHING

Turn On Delay Time :

15 ns

Package / Case :

3-SMD, Flat Lead

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

-8V

Power Dissipation-Max :

800mW Ta

Published :

2011

Rds On (Max) @ Id, Vgs :

30m Ω @ 4A, 4.5V

Terminal Position :

Dual

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Number of Channels :

1

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Operating Temperature :

150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

12V

Drain Current-Max (Abs) (ID) :

4A