R6030MNX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

90A

Drain Current-Max (Abs) (ID) :

30A

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Avalanche Energy Rating (Eas) :

6.7 mJ

Drain to Source Voltage (Vdss) :

600V

Vgs(th) (Max) @ Id :

5V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Number of Terminations :

3

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Case Connection :

Isolated

Power Dissipation-Max :

90W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2180pF @ 25V

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3 Full Pack

DS Breakdown Voltage-Min :

600V

Factory Lead Time :

13 Weeks

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

0.15Ohm

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

150m Ω @ 15A, 10V