R6030KNZ4C13

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-247

Rad Hardened :

No

Gate-Source Voltage (Max) :

±20(V)

Transistor Type :

1 N- Channel

Package / Case :

TO-247-3

Product Type :

MOSFET

Vgs(th) (Max) @ Id :

5V @ 1mA

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

600 V

Minimum Operating Temperature :

- 55 C

Channel Type :

N Channel

Subcategory :

MOSFETs

Power Dissipation (Max) :

305W (Tc)

Rise Time :

75 ns

Continuous Drain Current Id :

30A

Power Dissipation :

305(W)

Input Capacitance (Ciss) (Max) @ Vds :

2350 pF @ 25 V

Polarity :

N

Transistor Polarity :

N-Channel

RoHS :

Details

Continuous Drain Current :

30(A)

Gate Charge (Qg) (Max) @ Vgs :

56 nC @ 10 V

Rds On (Max) @ Id, Vgs :

130mOhm @ 14.5A, 10V

Package Type :

TO-247

Product Status :

Active

FET Feature :

-

Number of Elements :

1

Operating Temp Range :

-55C to 150C

Packaging :

Rail/Tube

Mounting Type :

Through Hole

Type :

Power MOSFET

Vgs (Max) :

±20V

Drain-Source On-Volt :

600(V)

FET Type :

N-Channel

Series :

-

Number of Channels :

1 Channel

Mounting :

Through Hole

Operating Temperature Classification :

Military

Base Product Number :

R6030

Manufacturer :

Rohm Semiconductor

Pin Count :

3 +Tab

Operating Temperature :

150°C (TJ)

Channel Mode :

Enhancement

Maximum Operating Temperature :

+ 150 C

Qualification :

-

Brand :

Rohm Semiconductor

Mounting Style :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

30A (Tc)

Package :

Tube