R6030KNX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

130m Ω @ 14.5A, 10V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

80A

Surface Mount :

No

Terminal Position :

Single

Factory Lead Time :

18 Weeks

Number of Terminations :

3

Continuous Drain Current (ID) :

30A

Input Capacitance (Ciss) (Max) @ Vds :

2350pF @ 25V

Case Connection :

Isolated

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3 Full Pack

Number of Elements :

1

Packaging :

Bulk

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

5V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Threshold Voltage :

5V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

600V

Published :

2015

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

86W Tc

Drain to Source Voltage (Vdss) :

600V