R6030ENZC8

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

130m Ω @ 14.5A, 10V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

Case Connection :

Isolated

Number of Elements :

1

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

80A

DS Breakdown Voltage-Min :

600V

Published :

2014

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

30A

Drain to Source Voltage (Vdss) :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

120W Tc

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-3P-3 Full Pack

Number of Terminations :

3

Lead Free :

Lead Free

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

Terminal Position :

Single

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Threshold Voltage :

4V

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

4V @ 1mA

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Operating Temperature :

150°C TJ