R6009ENX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

Threshold Voltage :

4V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

18A

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Continuous Drain Current (ID) :

9A

Published :

2014

Package / Case :

TO-220-3 Full Pack

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain to Source Voltage (Vdss) :

600V

Drain Current-Max (Abs) (ID) :

9A

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Number of Elements :

1

Power Dissipation-Max :

40W Tc

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Vgs (Max) :

±20V

Mount :

Through Hole

Case Connection :

Isolated

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

535m Ω @ 2.8A, 10V

DS Breakdown Voltage-Min :

600V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

18 Weeks

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole