R6009ENJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2016

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Factory Lead Time :

20 Weeks

Mount :

Surface Mount

Number of Pins :

83

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain-source On Resistance-Max :

0.535Ohm

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Continuous Drain Current (ID) :

9A

Drain Current-Max (Abs) (ID) :

9A

Pulsed Drain Current-Max (IDM) :

18A

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Power Dissipation-Max :

40W Tc

FET Type :

N-Channel

Number of Elements :

1

DS Breakdown Voltage-Min :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

535m Ω @ 2.8A, 10V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 25V

Transistor Application :

SWITCHING

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Threshold Voltage :

4V

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

153 mJ

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Packaging :

Cut Tape (CT)

RoHS Status :

ROHS3 Compliant