R6009END3TL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

535m Ω @ 2.8A, 10V

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

18A

Drain Current-Max (Abs) (ID) :

9A

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 25V

Drain-source On Resistance-Max :

0.535Ohm

Number of Elements :

1

Avalanche Energy Rating (Eas) :

153 mJ

Number of Terminations :

2

Power Dissipation-Max :

94W Tc

Factory Lead Time :

8 Weeks

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Vgs(th) (Max) @ Id :

4V @ 1mA

Packaging :

Tape and Reel (TR)