R6008FNX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

580pF @ 25V

Pin Count :

3

DS Breakdown Voltage-Min :

600V

Rise Time :

25ns

FET Type :

N-Channel

Turn On Delay Time :

20 ns

Number of Terminations :

3

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

950m Ω @ 4A, 10V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Drain Current-Max (Abs) (ID) :

8A

Number of Elements :

1

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Turn-Off Delay Time :

60 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10

Continuous Drain Current (ID) :

8A

Power Dissipation-Max :

50W Tc

Radiation Hardening :

No

Package / Case :

TO-220-3 Full Pack

Transistor Application :

SWITCHING

Factory Lead Time :

10 Weeks

Vgs (Max) :

±30V

Terminal Position :

Single

Number of Pins :

3

Drain-source On Resistance-Max :

0.95Ohm

Fall Time (Typ) :

30 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2012

Operating Temperature :

150°C TJ