R6008FNJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

32A

Turn On Delay Time :

20 ns

Published :

2012

Gate to Source Voltage (Vgs) :

30V

Rise Time :

25ns

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

4.3 mJ

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

50W Tc

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Number of Elements :

1

Continuous Drain Current (ID) :

8A

Number of Pins :

83

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

600V

Terminal Form :

Gull wing

Fall Time (Typ) :

30 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

950m Ω @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

580pF @ 25V

Lead Free :

Lead Free

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

600V

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

Radiation Hardening :

No

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

8A

Turn-Off Delay Time :

60 ns

Drain-source On Resistance-Max :

0.95Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Operating Temperature :

150°C TJ