R6007KNX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.62Ohm

Power Dissipation-Max :

46W Tc

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 25V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 1mA

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Packaging :

Bulk

Number of Elements :

1

Drain to Source Voltage (Vdss) :

600V

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

133 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

600V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

40 Weeks

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

7A

Case Connection :

Isolated

Package / Case :

TO-220-3 Full Pack

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

21A

Rds On (Max) @ Id, Vgs :

620m Ω @ 2.4A, 10V

FET Type :

N-Channel

Mounting Type :

Through Hole