R6007JND3TL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

475pF @ 100V

Transistor Element Material :

SILICON

Terminal Position :

Single

DS Breakdown Voltage-Min :

600V

Transistor Application :

SWITCHING

Power Dissipation-Max :

96W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

21A

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

18 Weeks

Drain-source On Resistance-Max :

0.78Ohm

Vgs(th) (Max) @ Id :

7V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

15V

Rds On (Max) @ Id, Vgs :

780m Ω @ 3.5A, 15V

Drain to Source Voltage (Vdss) :

600V

Gate Charge (Qg) (Max) @ Vgs :

17.5nC @ 15V

Vgs (Max) :

±30V

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

132 mJ

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Operating Temperature :

-55°C~150°C TJ