R6007ENXC7G

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Type :

Power MOSFET

Vgs(th) (Max) @ Id :

4V @ 1mA

Minimum Operating Temperature :

- 55 C

Gate Charge (Qg) (Max) @ Vgs :

20 nC @ 10 V

Mounting Type :

Through Hole

Channel Type :

N Channel

Continuous Drain Current Id :

7A

Operating Temperature :

150°C (TJ)

Package :

Tube

Power Dissipation :

46W

Channel Mode :

Enhancement

Maximum Operating Temperature :

+ 155 C

Manufacturer :

Rohm Semiconductor

Qualification :

-

Series :

-

Power Dissipation (Max) :

46W (Tc)

Subcategory :

MOSFETs

Drive Voltage (Max Rds On, Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

390 pF @ 25 V

Configuration :

Single

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

7A (Ta)

Mounting Style :

Through Hole

Brand :

Rohm Semiconductor

FET Feature :

-

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Supplier Device Package :

TO-220FM

Rds On (Max) @ Id, Vgs :

620mOhm @ 2.4A, 10V

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

600 V

Rise Time :

25 ns

MSL :

MSL 1 - Unlimited

RoHS :

Details

Product Status :

Active

Number of Channels :

1 Channel

Package / Case :

TO-220-3 Full Pack

Packaging :

Tube

FET Type :

N-Channel