R6007ENJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Power Dissipation-Max :

40W Tc

Number of Terminations :

2

Published :

2014

REACH SVHC :

No SVHC

Drain-source On Resistance-Max :

0.62Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

133 mJ

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 1mA

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Packaging :

Cut Tape (CT)

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

620m Ω @ 2.4A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

390pF @ 25V

Continuous Drain Current (ID) :

7A

Drain Current-Max (Abs) (ID) :

7A

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

20 Weeks

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Threshold Voltage :

4V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

600V

Terminal Position :

Single

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

14A

Number of Pins :

83

Operating Mode :

ENHANCEMENT MODE