R6004KNJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

46 mJ

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

10.2nC @ 10V

Drain-source On Resistance-Max :

0.98Ohm

Vgs(th) (Max) @ Id :

5V @ 1mA

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 25V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

600V

Factory Lead Time :

17 Weeks

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

12A

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

58W Tc

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

4A Tc

FET Type :

N-Channel

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

4A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Packaging :

Cut Tape (CT)

Number of Terminations :

2

DS Breakdown Voltage-Min :

600V

Rds On (Max) @ Id, Vgs :

980m Ω @ 1.5A, 10V

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB