R6004KNJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

600V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.98Ohm

Number of Elements :

1

Factory Lead Time :

17 Weeks

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 25V

Number of Terminations :

2

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

58W Tc

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

46 mJ

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

10.2nC @ 10V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 1mA

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

600V

Rds On (Max) @ Id, Vgs :

980m Ω @ 1.5A, 10V

Packaging :

Cut Tape (CT)

Pulsed Drain Current-Max (IDM) :

12A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

4A

ECCN Code :

EAR99

Terminal Form :

Gull wing

Transistor Application :

SWITCHING