R6004ENXC7G

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Minimum Operating Temperature :

- 55 C

Manufacturer :

Rohm Semiconductor

Product Category :

MOSFET

Package :

Tube

Mounting Style :

Through Hole

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

40W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Rise Time :

22 ns

Series :

-

Maximum Operating Temperature :

+ 155 C

Channel Type :

N Channel

Drain to Source Voltage (Vdss) :

600 V

Continuous Drain Current Id :

4A

FET Feature :

-

Rds On (Max) @ Id, Vgs :

980mOhm @ 1.5A, 10V

RoHS :

Details

Number of Channels :

1 Channel

Vgs (Max) :

±20V

Product Status :

Active

MSL :

MSL 1 - Unlimited

Vgs(th) (Max) @ Id :

4V @ 1mA

Subcategory :

MOSFETs

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Supplier Device Package :

TO-220FM

Current - Continuous Drain (Id) @ 25°C :

4A (Tc)

Mounting Type :

Through Hole

Brand :

Rohm Semiconductor

Input Capacitance (Ciss) (Max) @ Vds :

250 pF @ 25 V

Product Type :

MOSFET

Qualification :

-

Packaging :

Tube

FET Type :

N-Channel

Configuration :

Single

Operating Temperature :

150°C (TJ)

Transistor Type :

Power MOSFET

Channel Mode :

Enhancement

Package / Case :

TO-220-3 Full Pack

Power Dissipation :

40W