R6004ENX
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- Mfr.Part #
- R6004ENX
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4A TO220FM
- Stock
- 1,186
- In Stock ：
- 1,186
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 4A
- JEDEC-95 Code :
- TO-220AB
- Pulsed Drain Current-Max (IDM) :
- 8A
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 4A
- Drain-source On Resistance-Max :
- 0.98Ohm
- Case Connection :
- Isolated
- Operating Temperature :
- 150°C TJ
- Drain to Source Voltage (Vdss) :
- 600V
- Power Dissipation-Max :
- 40W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3 Full Pack
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Threshold Voltage :
- 4V
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 46 mJ
- Rds On (Max) @ Id, Vgs :
- 980m Ω @ 1.5A, 10V
- Packaging :
- Bulk
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Factory Lead Time :
- 18 Weeks
- Reach Compliance Code :
- not_compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Through Hole
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 600V
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2012
- Datasheets
- R6004ENX
N-Channel Bulk 980m Ω @ 1.5A, 10V ±20V 250pF @ 25V 15nC @ 10V 600V TO-220-3 Full Pack
R6004ENX Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 46 mJ.A device's maximum input capacitance is 250pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 4A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 8A, which is also its maximum rating peak drainage current.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.For normal operation, maintain the DS breakdown voltage above 600V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
R6004ENX Features
the avalanche energy rating (Eas) is 46 mJ
a continuous drain current (ID) of 4A
based on its rated peak drain current 8A.
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
R6004ENX Applications
There are a lot of ROHM Semiconductor
R6004ENX applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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