R6004ENJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 1mA

Continuous Drain Current (ID) :

4A

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

980m Ω @ 1.5A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Factory Lead Time :

20 Weeks

Drain to Source Voltage (Vdss) :

600V

Power Dissipation-Max :

40W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

REACH SVHC :

No SVHC

Drain Current-Max (Abs) (ID) :

4A

Avalanche Energy Rating (Eas) :

46 mJ

Terminal Position :

Single

Threshold Voltage :

4V

Drain-source On Resistance-Max :

0.98Ohm

DS Breakdown Voltage-Min :

600V

Packaging :

Cut Tape (CT)

Pulsed Drain Current-Max (IDM) :

8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

83

Case Connection :

DRAIN

Published :

2016

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Vgs (Max) :

±20V

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE