R6004ENDTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Temperature :

150°C TJ

Pulsed Drain Current-Max (IDM) :

8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Published :

2014

DS Breakdown Voltage-Min :

600V

Power Dissipation-Max :

20W Tc

REACH SVHC :

No SVHC

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

4A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

980m Ω @ 1.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Cut Tape (CT)

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

600V

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Continuous Drain Current (ID) :

4A

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

0.98Ohm

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

46 mJ

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Threshold Voltage :

4V

Terminal Position :

Single

Mount :

Surface Mount