R6004CNDTL
- Mfr.Part #
- R6004CNDTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4A CPT3
- Stock
- 5,436
- In Stock :
- 5,436
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 28ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 52 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Fall Time (Typ) :
- 39 ns
- Mount :
- Surface Mount
- Published :
- 2011
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 4A
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 600V
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 44 ns
- Drain to Source Voltage (Vdss) :
- 600V
- Pulsed Drain Current-Max (IDM) :
- 16A
- JESD-30 Code :
- R-PSSO-G2
- Turn On Delay Time :
- 23 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Lead Free :
- Lead Free
- JESD-609 Code :
- e2
- Continuous Drain Current (ID) :
- 4A
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 280pF @ 25V
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Gate to Source Voltage (Vgs) :
- 25V
- Vgs (Max) :
- ±25V
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 1.1 mJ
- Number of Terminations :
- 2
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Power Dissipation-Max :
- 40W Tc
- Rds On (Max) @ Id, Vgs :
- 1.8 Ω @ 2A, 10V
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Datasheets
- R6004CNDTL

N-Channel Tape & Reel (TR) 1.8 Ω @ 2A, 10V ±25V 280pF @ 25V 11nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
R6004CNDTL Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1.1 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 280pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 4A.As a result of its turn-off delay time, which is 44 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 16A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 23 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.In order for DS breakdown voltage to remain above 600V, it should remain above the 600V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
R6004CNDTL Features
the avalanche energy rating (Eas) is 1.1 mJ
a continuous drain current (ID) of 4A
the turn-off delay time is 44 ns
based on its rated peak drain current 16A.
a 600V drain to source voltage (Vdss)
R6004CNDTL Applications
There are a lot of ROHM Semiconductor
R6004CNDTL applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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