R6002ENDTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

600V

Drain to Source Voltage (Vdss) :

600V

Number of Pins :

3

Number of Elements :

1

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Continuous Drain Current (ID) :

1.7A

Threshold Voltage :

4V

Terminal Position :

Single

Terminal Form :

Gull wing

Packaging :

Cut Tape (CT)

Vgs(th) (Max) @ Id :

4V @ 1mA

Power Dissipation-Max :

20W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

4A

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 10V

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

6 mJ

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

150°C TJ

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

65pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2016

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 500mA, 10V

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount