R6002END3TL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

FET Type :

N-Channel

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

1.7A

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

6 mJ

Vgs(th) (Max) @ Id :

4V @ 1mA

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

4A

Input Capacitance (Ciss) (Max) @ Vds :

65pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 10V

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 500mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

600V

Factory Lead Time :

18 Weeks

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

26W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

600V

Number of Elements :

1