R5016ANJTL
- Mfr.Part #
- R5016ANJTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A LPTS
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 64A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Turn On Delay Time :
- 40 ns
- Number of Pins :
- 3
- Number of Channels :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 16A
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 8A, 10V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e2
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time (Typ) :
- 55 ns
- Turn-Off Delay Time :
- 150 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rise Time :
- 50ns
- Drain-source On Resistance-Max :
- 0.27Ohm
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Position :
- Single
- Power Dissipation-Max :
- 100W Tc
- Drain to Source Breakdown Voltage :
- 500V
- Published :
- 2009
- Datasheets
- R5016ANJTL

N-Channel Tape & Reel (TR) 270m Ω @ 8A, 10V ±30V 1800pF @ 25V 50nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
R5016ANJTL Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 150 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 64A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 40 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
R5016ANJTL Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 64A.
R5016ANJTL Applications
There are a lot of ROHM Semiconductor
R5016ANJTL applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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