R5013ANXFU6

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Mfr.Part #
R5013ANXFU6
Manufacturer
ROHM Semiconductor
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 500V 13A TO220FM
Stock
15,494
In Stock :
15,494

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Power Dissipation-Max :
50W Tc
Rise Time :
32ns
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Mounting Type :
Through Hole
Published :
2008
Gate to Source Voltage (Vgs) :
30V
Rds On (Max) @ Id, Vgs :
380m Ω @ 6.5A, 10V
FET Type :
N-Channel
Configuration :
Single
Number of Pins :
3
ECCN Code :
EAR99
Package / Case :
TO-220-3 Full Pack
Vgs (Max) :
±30V
Packaging :
Bulk
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
30 ns
Radiation Hardening :
No
Mount :
Through Hole
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Turn-Off Delay Time :
90 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
500V
Turn On Delay Time :
30 ns
Continuous Drain Current (ID) :
13A
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
13A Ta
Datasheets
R5013ANXFU6
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor R5013ANXFU6 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3 Full Pack, Operating Temperature:150°C TJ, R5013ANXFU6 pinout, R5013ANXFU6 datasheet PDF, R5013ANXFU6 amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor R5013ANXFU6 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor R5013ANXFU6


N-Channel Bulk 380m Ω @ 6.5A, 10V ±30V 1300pF @ 25V 35nC @ 10V 500V TO-220-3 Full Pack

R5013ANXFU6 Overview


The maximum input capacitance of this device is 1300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 90 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 30 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

R5013ANXFU6 Features


a continuous drain current (ID) of 13A
the turn-off delay time is 90 ns
a 500V drain to source voltage (Vdss)


R5013ANXFU6 Applications


There are a lot of ROHM Semiconductor
R5013ANXFU6 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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