R5011ANJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Power Dissipation-Max :

75W Tc

Drain to Source Breakdown Voltage :

500V

Radiation Hardening :

No

Number of Channels :

1

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Turn-Off Delay Time :

75 ns

Continuous Drain Current (ID) :

11A

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.5Ohm

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin/Copper (Sn/Cu)

JESD-609 Code :

e2

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Published :

2009

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Terminal Form :

Gull wing

Rise Time :

28ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Turn On Delay Time :

26 ns

Pin Count :

3

Operating Temperature :

150°C TJ

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

44A

Lead Free :

Lead Free

Fall Time (Typ) :

30 ns

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

500m Ω @ 5.5A, 10V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

Terminal Position :

Single

Vgs (Max) :

±30V