R5009FNX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Rise Time :

20ns

Mounting Type :

Through Hole

Turn-Off Delay Time :

50 ns

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

500V

Avalanche Energy Rating (Eas) :

5.4 mJ

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

500V

Rds On (Max) @ Id, Vgs :

840m Ω @ 4.5A, 10V

Power Dissipation-Max :

50W Tc

Number of Terminations :

3

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 1mA

Fall Time (Typ) :

40 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Transistor Element Material :

SILICON

Packaging :

Bulk

Drain-source On Resistance-Max :

0.84Ohm

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

Isolated

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

24 ns

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

9A

Factory Lead Time :

17 Weeks

Published :

2012

Mount :

Through Hole