R5005CNX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Case Connection :

Isolated

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

Published :

2008

Avalanche Energy Rating (Eas) :

1.6 mJ

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

5A

Pulsed Drain Current-Max (IDM) :

20A

Number of Terminations :

3

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

10.8nC @ 10V

Package / Case :

TO-220-3 Full Pack

Drain to Source Voltage (Vdss) :

500V

Lead Free :

Lead Free

Vgs (Max) :

±30V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 2.5A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

5A

DS Breakdown Voltage-Min :

500V

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Power Dissipation-Max :

40W Tc

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Terminal Position :

Single

Mounting Type :

Through Hole

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Packaging :

Bulk