QS6U24TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

1.7nC @ 5V

Drain-source On Resistance-Max :

0.4Ohm

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Turn-Off Delay Time :

18 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

900mW

Drain Current-Max (Abs) (ID) :

1A

Pin Count :

6

Mount :

Surface Mount

Terminal Form :

Gull wing

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

90pF @ 10V

Drain to Source Voltage (Vdss) :

30V

Lead Free :

Lead Free

FET Type :

P-Channel

Power Dissipation-Max :

1.25W Ta

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Current Rating :

-1A

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

400m Ω @ 1A, 10V

Radiation Hardening :

No

Number of Terminations :

6

Transistor Application :

SWITCHING

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Rise Time :

7ns

Number of Elements :

1

Published :

2011

Voltage - Rated DC :

-30V

Vgs (Max) :

±20V

Fall Time (Typ) :

7 ns

Continuous Drain Current (ID) :

1A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Transistor Element Material :

SILICON

Turn On Delay Time :

9 ns

Drain to Source Breakdown Voltage :

-30V

JESD-609 Code :

e1

Current - Continuous Drain (Id) @ 25°C :

1A Ta

FET Feature :

Schottky Diode (Isolated)

Factory Lead Time :

20 Weeks