PZT751T1G

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Mfr.Part #
PZT751T1G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 60V 2A SOT223
Stock
1,870
In Stock :
1,870

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Terminations :
4
Width :
3.5mm
Max Collector Current :
2A
Lead Free :
Lead Free
Collector Emitter Breakdown Voltage :
60V
Pbfree Code :
yes
Terminal Form :
Gull wing
Collector Emitter Voltage (VCEO) :
60V
DC Current Gain (hFE) (Min) @ Ic, Vce :
75 @ 1A 2V
Pin Count :
4
Number of Pins :
4
Voltage - Rated DC :
-60V
Number of Elements :
1
Package / Case :
TO-261-4, TO-261AA
Max Power Dissipation :
800mW
Time@Peak Reflow Temperature-Max (s) :
40
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
260
Contact Plating :
Tin
Mounting Type :
Surface Mount
Collector Base Voltage (VCBO) :
80V
Element Configuration :
Single
Max Breakdown Voltage :
60V
Current - Collector Cutoff (Max) :
100nA ICBO
Surface Mount :
yes
Case Connection :
COLLECTOR
Frequency :
75MHz
JESD-609 Code :
e3
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
500mV
Polarity/Channel Type :
PNP
Operating Temperature :
150°C TJ
Emitter Base Voltage (VEBO) :
5V
Gain Bandwidth Product :
75MHz
Transistor Type :
PNP
Base Part Number :
PZT751
Transistor Element Material :
SILICON
Packaging :
Tape and Reel (TR)
REACH SVHC :
No SVHC
Length :
6.5mm
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Current Rating :
2A
hFE Min :
75
Transition Frequency :
75MHz
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 2A
ECCN Code :
EAR99
Factory Lead Time :
9 Weeks
Height :
1.57mm
Published :
2005
Weight :
4.535924g
Power Dissipation :
800mW
RoHS Status :
ROHS3 Compliant
Terminal Position :
Dual
Introducing Transistors - Bipolar (BJT) - Single onsemi PZT751T1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Number of Pins:4, Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Base Part Number:PZT751, PZT751T1G pinout, PZT751T1G datasheet PDF, PZT751T1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi PZT751T1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi PZT751T1G


PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

PZT751T1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 75MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 2A volts.

PZT751T1G Features


the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 75MHz


PZT751T1G Applications


There are a lot of ON Semiconductor
PZT751T1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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