PZT751T1G
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- Mfr.Part #
- PZT751T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT223
- Stock
- 1,870
- In Stock ：
- 1,870
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Number of Pins :
- 4
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Package / Case :
- TO-261-4, TO-261AA
- Voltage - Rated DC :
- -60V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 500mV
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 75MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 2A
- Surface Mount :
- yes
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 4
- Max Power Dissipation :
- 800mW
- Collector Emitter Breakdown Voltage :
- 60V
- Length :
- 6.5mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1A 2V
- Published :
- 2005
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Base Part Number :
- PZT751
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 9 Weeks
- JESD-609 Code :
- e3
- Weight :
- 4.535924g
- Power Dissipation :
- 800mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 80V
- Lead Free :
- Lead Free
- Height :
- 1.57mm
- Frequency :
- 75MHz
- Pin Count :
- 4
- Transition Frequency :
- 75MHz
- Max Collector Current :
- 2A
- Case Connection :
- COLLECTOR
- hFE Min :
- 75
- Width :
- 3.5mm
- Datasheets
- PZT751T1G
PZT751T1G Documents
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZT751T1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 75MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 2A volts.
PZT751T1G Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 75MHz
PZT751T1G Applications
There are a lot of ON Semiconductor
PZT751T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| PZT751T1 | onsemi | 12,227 | TRANS SS HC PNP 2A 60V SOT223 |
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