PZT751T1G

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Mfr.Part #
PZT751T1G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 60V 2A SOT223
Stock
1,870
In Stock :
1,870

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Number of Pins :
4
Polarity/Channel Type :
PNP
Element Configuration :
Single
Terminal Form :
Gull wing
Collector Emitter Voltage (VCEO) :
60V
Current - Collector Cutoff (Max) :
100nA ICBO
Peak Reflow Temperature (Cel) :
260
Radiation Hardening :
No
Package / Case :
TO-261-4, TO-261AA
Voltage - Rated DC :
-60V
Number of Elements :
1
ECCN Code :
EAR99
Collector Emitter Saturation Voltage :
500mV
Mounting Type :
Surface Mount
Emitter Base Voltage (VEBO) :
5V
Gain Bandwidth Product :
75MHz
Time@Peak Reflow Temperature-Max (s) :
40
Current Rating :
2A
Surface Mount :
yes
Operating Temperature :
150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
4
Max Power Dissipation :
800mW
Collector Emitter Breakdown Voltage :
60V
Length :
6.5mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
75 @ 1A 2V
Published :
2005
REACH SVHC :
No SVHC
Terminal Position :
Dual
Contact Plating :
Tin
Base Part Number :
PZT751
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
9 Weeks
JESD-609 Code :
e3
Weight :
4.535924g
Power Dissipation :
800mW
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 2A
Pbfree Code :
yes
Packaging :
Tape and Reel (TR)
Max Breakdown Voltage :
60V
Collector Base Voltage (VCBO) :
80V
Lead Free :
Lead Free
Height :
1.57mm
Frequency :
75MHz
Pin Count :
4
Transition Frequency :
75MHz
Max Collector Current :
2A
Case Connection :
COLLECTOR
hFE Min :
75
Width :
3.5mm
Introducing Transistors - Bipolar (BJT) - Single onsemi PZT751T1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Number of Terminations:4, Base Part Number:PZT751, PZT751T1G pinout, PZT751T1G datasheet PDF, PZT751T1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi PZT751T1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi PZT751T1G


PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

PZT751T1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 75MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 2A volts.

PZT751T1G Features


the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 75MHz


PZT751T1G Applications


There are a lot of ON Semiconductor
PZT751T1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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