PZT751T1G
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- Mfr.Part #
- PZT751T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT223
- Stock
- 1,870
- In Stock ：
- 1,870
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 4
- Width :
- 3.5mm
- Max Collector Current :
- 2A
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 60V
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1A 2V
- Pin Count :
- 4
- Number of Pins :
- 4
- Voltage - Rated DC :
- -60V
- Number of Elements :
- 1
- Package / Case :
- TO-261-4, TO-261AA
- Max Power Dissipation :
- 800mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 80V
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Surface Mount :
- yes
- Case Connection :
- COLLECTOR
- Frequency :
- 75MHz
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 500mV
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 75MHz
- Transistor Type :
- PNP
- Base Part Number :
- PZT751
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Length :
- 6.5mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current Rating :
- 2A
- hFE Min :
- 75
- Transition Frequency :
- 75MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- ECCN Code :
- EAR99
- Factory Lead Time :
- 9 Weeks
- Height :
- 1.57mm
- Published :
- 2005
- Weight :
- 4.535924g
- Power Dissipation :
- 800mW
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Datasheets
- PZT751T1G
PZT751T1G Documents
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZT751T1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 75MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 2A volts.
PZT751T1G Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 75MHz
PZT751T1G Applications
There are a lot of ON Semiconductor
PZT751T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| PZT751T1 | onsemi | 12,227 | TRANS SS HC PNP 2A 60V SOT223 |
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